Method for fabricating stack structure of semiconductor packages

ABSTRACT

A stack structure of semiconductor packages and a method for fabricating the stack structure are provided. A plurality of electrical connection pads and dummy pads are formed on a surface of a substrate of an upper semiconductor package and at positions corresponding to those around an encapsulant of a lower semiconductor package. Solder balls are implanted to the electrical connection pads and the dummy pads. The upper semiconductor package is mounted on the lower semiconductor package. The upper semiconductor package is electrically connected to the lower semiconductor package by the solder balls implanted to the electrical connection pads, and the encapsulant of the lower semiconductor package is surrounded and confined by the solder balls implanted to the dummy pads. Thereby, the upper semiconductor package is properly and securely positioned on the lower semiconductor package, without the occurrence of misalignment between the upper and lower semiconductor packages.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional of copending application U.S. Ser. No.11/732,853, filed on Apr. 4, 2007.

FIELD OF THE INVENTION

The present invention relates to semiconductor packages and methods forfabricating the same, and more particularly, to a stack structure ofsemiconductor packages and a method for fabricating the stack structure.

BACKGROUND OF THE INVENTION

In response to electronic products that are being developed to havemulti-functionality, high electrical performance and high operatingspeed nowadays, semiconductor manufacturers endeavor to providesemiconductor devices integrating a plurality of chips or packages asrequired for the electronic products.

FIG. 1 shows a stack structure of semiconductor packages disclosed inU.S. Pat. No. 5,222,014. A ball grid array (BGA) substrate 11 with bondpads 110 formed on an upper surface thereof is provided, and asemiconductor chip 10 is mounted on the BGA substrate 11 andencapsulated by an encapsulant 13, so as to form a first semiconductorpackage 101. Then, a second semiconductor package 102 is mounted andelectrically connected to the bond pads 110 of the substrate 11 of thefirst semiconductor package 101 by solder balls 14, so as to form astack structure of semiconductor packages.

However, in the above stack structure of semiconductor packages, whenthe second semiconductor package is mounted to the bond pads of thesubstrate of the first semiconductor package by the solder balls and issubjected to a reflow process to make the solder balls bonded andelectrically connected to the bond pads, misalignment of the secondsemiconductor package with respect to the first semiconductor packageusually occurs because the solder balls become melted and softenedduring the reflow process, thereby leading to a failure of electricalconnection between the first and second semiconductor packages.

Accordingly, U.S. Pat. No. 6,987,314 discloses another stack structureof semiconductor packages as shown in FIG. 2. In this stack structure, apre-solder material 22 is disposed on bond pads of a substrate of afirst semiconductor package 201. When a second semiconductor package 202is mounted on the first semiconductor package 201 by solder balls 24that are reflowed to the pre-solder material 22, self-alignment betweenthe pre-solder material 22 and the solder balls 24 can properly positionthe second semiconductor package 202 on the first semiconductor package201. However, the provision of the pre-solder material on the bond padsof the substrate of the first semiconductor package increases not onlythe fabrication costs but also complexity of the fabrication processesfor the stack structure.

Taiwan Patent No. I250627 discloses another stack structure ofsemiconductor packages as shown in FIG. 3. In this stack structure, asecond semiconductor package 302 is electrically connected to a firstsemiconductor package 301 by a plurality of solder balls 34, andinfrared paste (IR paste) 35 is provided between a substrate 311 of thefirst semiconductor package 301 and a substrate 312 of the secondsemiconductor package 302. Then, infrared irradiation is performed toadhere the second semiconductor package 302 to the first semiconductorpackage 301 by the IR paste 35. However, the provision of the IR pasteon the substrate of the first semiconductor package and performing theinfrared irradiation to adhere the second semiconductor package to thefirst semiconductor package both undesirably increase the fabricationcosts and complexity of the fabrication processes for the stackstructure.

Therefore, the problem to be solved here is to provide a stack structureof semiconductor packages and a method for fabricating the same, so asto prevent the misalignment problem caused by a reflow process whenusing solder balls to electrically connect and stack semiconductorpackages, and avoid increase in fabrication costs and process complexitydue to the use of a pre-solder material disposed on bond pads of asubstrate of a lower semiconductor package or due to the use of IR pasteprovided between substrates of upper and lower semiconductor packages.

SUMMARY OF THE INVENTION

In view of the aforesaid drawbacks of the prior art, an objective of thepresent invention is to provide a stack structure of semiconductorpackages and a method for fabricating the stack structure, so as toprevent misalignment between the semiconductor packages during a reflowprocess when the semiconductor packages are stacked.

Another objective of the present invention is to provide a stackstructure of semiconductor packages and a method for fabricating thestack structure without the use of a pre-solder materials disposed onbond pads of a substrate of a lower semiconductor package so as not toincrease the fabrication costs and complexity of the fabricationprocesses.

A further objective of the present invention is to provide a stackstructure of semiconductor packages and a method for fabricating thestack structure without the use of an infrared paste provided betweensubstrates of upper and lower semiconductor packages and without theneed of performing infrared irradiation so as not to increase thefabrication costs and complexity of the fabrication processes.

In accordance with the above and other objectives, the present inventionproposes a method for fabricating a stack structure of semiconductorpackages, comprising the steps of: providing a substrate having a firstsurface and a second surface opposite to the first surface, wherein aplurality of electrical connection pads and dummy pads are formed on thesecond surface of the substrate; mounting and electrically connecting atleast one semiconductor chip to the first surface of the substrate;implanting solder balls to the electrical connection pads and the dummypads of the second surface of the substrate, thereby forming an uppersemiconductor package; and mounting the upper semiconductor package on afabricated lower semiconductor package, wherein the lower semiconductorpackage comprises a substrate, a semiconductor chip mounted on andelectrically connected to the substrate, and an encapsulant formed onthe substrate and encapsulating the semiconductor chip, wherein theupper semiconductor package is electrically connected to the substrateof the lower semiconductor package by the solder balls implanted to theelectrical connection pads, and the solder balls implanted to the dummypads surround and confine the encapsulant of the lower semiconductorpackage, so as to form the stack structure of the semiconductorpackages. Further, the dummy pads of the upper semiconductor packagerare formed at positions corresponding to those around the encapsulant ofthe lower semiconductor package. In practical implementation, the dummypads can be adjusted in location and number flexibly as required, aslong as at least one dummy pad is provided at a position correspondingto that closely adjacent to each edge of the encapsulant of the lowersemiconductor package. For example, the dummy pads can be located atpositions corresponding to those closely adjacent to a middle portion,one end or two ends of each edge of the encapsulant, or can be locatedat positions corresponding to those closely adjacent to corners of theencapsulant and further extended along the edges forming the corners ofthe encapsulant, so as to allow the solder balls to be implanted to thedummy pads to form a positioning mechanism.

The present invention also proposes a stack structure of semiconductorpackages, comprising: a lower semiconductor package, which comprises asubstrate, a semiconductor chip mounted on and electrically connected tothe substrate, and an encapsulant formed on the substrate andencapsulating the semiconductor chip; and an upper semiconductor packagedisposed on the lower semiconductor package, wherein the uppersemiconductor package comprises a substrate having a first surface and asecond substrate opposite to the first surface, a semiconductor chipmounted on and electrically connected to the first surface of thesubstrate, a plurality of electrical connection pads and dummy padsformed on the second surface of the substrate, and solder ballsimplanted to the electrical connection pads and the dummy pads, whereinthe upper semiconductor package is electrically connected to thesubstrate of the lower semiconductor package by the solder ballsimplanted to the electrical connection pads, and the solder ballsimplanted to the dummy pads surround and confine the encapsulant of thelower semiconductor package.

Therefore, in the stack structure of semiconductor packages and themethod for fabricating the stack structure according to the presentinvention, a plurality of electrical connection pads serving aselectrical input/output (I/O) pads and a plurality of dummy pads areformed on the second surface of the upper semiconductor package, whereinthe positions of the dummy pads correspond to those around theencapsulant of the lower semiconductor package. Thus, when the uppersemiconductor package is mounted on the lower semiconductor package, theupper semiconductor package can be electrically connected to the lowersemiconductor package by the solder balls implanted to the electricalconnection pads, and the encapsulant of the lower semiconductor packagecan be surrounded and confined by the solder balls implanted to thedummy pads, so as to effectively and properly position the uppersemiconductor package on the lower semiconductor package, therebyavoiding misalignment during a reflow process and electrical connectionfailure for stacking semiconductor packages in the prior art.

Moreover, the solder balls on the dummy pads to form the positioningmechanism are implanted together with the solder balls on the electricalconnection pads, such that no additional fabrication process isrequired. Compared with the prior art using a pre-solder materialprovided on the substrate of the lower semiconductor package, orapplying infrared paste between the substrates of the upper and lowersemiconductor package and performing infrared irradiation so as topositioning the stacked upper and lower semiconductor packages, thepresent invention without the use of the pre-solder material, infraredpaste and infrared irradiation, effectively avoids increase in thefabrication costs and complexity of the fabrication processes.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention can be more fully understood by reading thefollowing detailed description of the preferred embodiments, withreference made to the accompanying drawings, wherein:

FIG. 1 (PRIOR ART) is a cross-sectional view of a stack structure ofsemiconductor packages disclosed in U.S. Pat. No. 5,222,014;

FIG. 2 (PRIOR ART) is a cross-sectional view of a stack structure ofsemiconductor packages disclosed in U.S. Pat. No. 6,987,314;

FIG. 3 (PRIOR ART) is a cross-sectional view of a stack structure ofsemiconductor packages disclosed in Taiwan Patent No. I250627;

FIGS. 4A to 4D are cross-sectional views of a stack structure ofsemiconductor packages and a method for fabricating the stack structurein accordance with a first embodiment of the present invention;

FIGS. 5A to 5C are schematic diagrams showing different examples of asubstrate shown in FIG. 4A;

FIGS. 6A to 6B are bottom views of a substrate of an upper semiconductorpackage of a stack structure in accordance with a second embodiment ofthe present invention;

FIG. 7 is a cross-sectional view of a stack structure of semiconductorpackages in accordance with a third embodiment of the present invention;

FIG. 8 is a cross-sectional view of a stack structure of semiconductorpackages in accordance with a fourth embodiment of the presentinvention; and

FIG. 9 is a cross-sectional view of a stack structure of semiconductorpackages in accordance with a fifth embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of a stack structure of semiconductor packages anda method for fabricating the stack structure as proposed in the presentinvention are described as follows with reference to FIGS. 4 to 9. Itshould be understood that the drawings are simplified schematic diagramsonly showing the elements relevant to the present invention, and thelayout of elements could be more complicated in practicalimplementation.

First Embodiment

FIGS. 4A to 4D are cross-sectional views of a stack structure ofsemiconductor packages and a method for fabricating the stack structurein accordance with a first embodiment of the present invention.

As shown in FIG. 4A, a substrate 41 having a first surface 41 a and asecond surface 41 b opposite to the first surface 41 a is provided,wherein a plurality of electrical connection pads 411 and dummy pads 412are formed on the second surface 41 b of the substrate 41. The substrate41 is a substrate of an upper semiconductor package that is to besubsequently stacked on a fabricated lower semiconductor package. Thesubstrate 41 is, for example, a ball grid array (BGA) substrate.

Also referring to FIG. 5A showing the second surface 41 b of thesubstrate 41 of FIG. 4A, the plurality of electrical connection pads 411serve as electrical input/output (I/O) pads and are peripherally locatedin a peripheral portion of the second surface 41 b of the substrate 41,and the plurality of dummy pads 412 are located in a central portion ofthe second surface 41 b of the substrate 41. Particularly, the dummypads 412 are formed at positions correspond to those around anencapsulant (its projection to the second surface 41 b is shown by thedashed lines) of the lower semiconductor package.

The dummy pads 412 can be adjusted in position and number flexibly asrequired in practical implementation, as long as at least one dummy pad412 is provided at a position corresponding to that closely adjacent toeach edge of the encapsulant of the lower semiconductor package. Forexample, the dummy pads 412 can be located at positions corresponding tothose closely adjacent to a middle portion of each edge of theencapsulant (as shown in FIG. 5A), those closely adjacent to one end ofeach edge of the encapsulant (as shown in FIG. 5B), or those closelyadjacent to two ends of each edge of the encapsulant (as shown in FIG.5C), etc.

As shown in FIG. 4B, at least one semiconductor chip 40 is mounted onthe first surface 41 a of the substrate 41 and is electrically connectedto the substrate 41 by a plurality of bonding wires 42. Then, anencapsulant 43 is formed on the first surface 41 a of the substrate 41to encapsulate the semiconductor chip 40 and the bonding wires 42.

As shown in FIG. 4C, a plurality of solder balls 441, 442 are implantedto the electrical connection pads 411 and the dummy pads 412 on thesecond surface 41 b of the substrate 41 respectively, so as to form theupper semiconductor package 410. The solder balls 442 implanted to thedummy pads 412 may have an approximately same size as that of the solderballs 441 implanted to the electrical connection pads 411.

As shown in FIG. 4D, the upper semiconductor package 410 is mounted onthe fabricated lower semiconductor package 510.

The lower semiconductor package 510 comprises a substrate 51, asemiconductor chip 50 mounted on and electrically connected to thesubstrate 51, and an encapsulant 53 formed on the substrate 51 andencapsulating the semiconductor chip 50. The substrate 51 of the lowersemiconductor package 510 comprises a first surface 51 a and a secondsurface 51 b opposite to the first surface 51 a. A plurality ofelectrical connection pads 511 are formed on the first and secondsurfaces 51 a, 51 b of the substrate 51. The semiconductor chip 50 ismounted on the first surface 51 a of the substrate 51 and iselectrically connected to the substrate 51 by a plurality of bondingwires 52.

The solder balls 441 implanted to the electrical connection pads 411 ofthe upper semiconductor package 410 are electrically connected to theelectrical connection pads 511 on the first surface 51 a of thesubstrate 51 of the lower semiconductor package 510 by a reflow process.The solder balls 442 implanted to the dummy pads 412 of the uppersemiconductor package 410 surround and confine the encapsulant 53 of thelower semiconductor package 510. This forms a stack structure ofsemiconductor packages. Further, a plurality of solder balls 54 can beimplanted to the electrical connection pads 511 on the second surface 51b of the lower semiconductor package 510, so as to electrically connectthe stack structure of semiconductor packages to an external device.

It is to be noted that, the semiconductor package stacking process maybe continued to stack more semiconductor packages on the stackstructure, and the number of semiconductor packages stacked is notlimited to two shown in the drawings here.

In accordance with the above fabrication method, the present inventionalso discloses a stack structure of semiconductor packages. The stackstructure comprises a lower semiconductor package 510, and at least oneupper semiconductor package 410 mounted on the lower semiconductorpackage 510. The lower semiconductor package 510 comprises a substrate51, a semiconductor chip 50 mounted on and electrically connected to thesubstrate 51, and an encapsulant 53 formed on the substrate 51 andencapsulating the semiconductor chip 50. The upper semiconductor package410 comprises a substrate 41 having a first surface 41 a and a secondsurface 41 b opposite to the first surface 41 a, a semiconductor chip 40mounted on and electrically connected to the first surface 41 a of thesubstrate 41, a plurality of electrical connection pads 411 and dummypads 412 formed on the second surface 41 b of the substrate 41, and aplurality of solder balls 441, 442 implanted to the electricalconnection pads 411 and the dummy pads 412 respectively. The uppersemiconductor package 410 is electrically connected to the substrate 51of the lower semiconductor package 510 by the solder balls 441 implantedto the electrical connection pads 411 of the upper semiconductor package410. The solder balls 442 implanted to the dummy pads 412 of the uppersemiconductor package 410 surround and confine the encapsulant 53 of thelower semiconductor package 510. By such arrangement, the upper andlower semiconductor packages can be efficiently and properly positionedwith respect to each other.

Second Embodiment

FIGS. 6A and 6B show a second surface of a substrate of an uppersemiconductor package in accordance with a second embodiment of thepresent invention.

A stack structure of semiconductor packages and a method for fabricatingthe stack structure in the second embodiment are similar to those in theaforementioned first embodiment, with a primary difference in that, asshown in FIGS. 6A and 6B for the second embodiment, the dummy pads 412formed on the second surface 41 b of the substrate of the uppersemiconductor package are located at positions corresponding to thoseclosely adjacent to corners of the encapsulant (its projection to thesecond surface 41 b is shown by the dashed lines) of the lowersemiconductor package and further extended along the edges forming thecorners of the encapsulant, thereby forming a continuous arrangement ofthe dummy pads 412 around each corner of the region encompassed by thedashed lines shown in FIG. 6A. As such, the solder balls, which aresubsequently implanted to the dummy pads of the upper semiconductorpackage and reflowed to be bonded to the lower semiconductor package,form a dam structure 442 c around each of the corners of the encapsulantof the lower semiconductor package. Thus, the upper semiconductorpackage can be properly mounted and effectively confined in position onthe lower semiconductor package.

Third Embodiment

FIG. 7 is a cross-sectional view of a stack structure of semiconductorpackages in accordance with a third embodiment of the present invention.

The stack structure of semiconductor packages of the third embodiment issimilar to those of the aforementioned embodiments, with a primarydifference in that, as shown in FIG. 7 for the third embodiment, thesolder balls 442 implanted to the dummy pads 412 of the second surface41 b of the substrate of the upper semiconductor package 410 are smallerin size than the solder ball 441 implanted to the electrical connectionpads 411, as long as the solder balls 422 implanted to the dummy pads412 can surround and confine the encapsulant 53 of the lowersemiconductor package 510, so as to prevent misalignment between theupper and lower semiconductor packages 410, 510.

Fourth Embodiment

FIG. 8 is a cross-sectional view of a stack structure of semiconductorpackages in accordance with a fourth embodiment of the presentinvention.

The stack structure of semiconductor packages of the fourth embodimentis similar to those of the aforementioned embodiments, with a primarydifference in that, as shown in FIG. 8 for the fourth embodiment, thereare also formed dummy pads 512 on the first surface 51 a of thesubstrate of the lower semiconductor package 510, and the dummy pads 512correspond in position to the dummy pads 412 on the second surface 41 bof the substrate of the upper semiconductor package 410. As such, thesolder balls 442 implanted to the dummy pads 412 of the uppersemiconductor package 410 are connected to the dummy pads 512 of thelower semiconductor package 510, thereby strengthening the bondingbetween the upper and lower semiconductor packages 410, 510.

Fifth Embodiment

FIG. 9 is a cross-sectional view of a stack structure of semiconductorpackages in accordance with a fifth embodiment of the present invention.

The stack structure of semiconductor packages of the fifth embodiment issimilar to those of the aforementioned embodiments, with a primarydifference in that, as shown in FIG. 9 for the fifth embodiment, each ofthe solder balls 442 implanted to the dummy pads 412 of the uppersemiconductor package 410 comprises a core portion 442 a and aperipheral portion 442 b The core portion 442 a is made of copper, leador polymer, and the peripheral portion 442 b is made of a soldermaterial. The core portions 442 a of the solder balls 442 implanted tothe dummy pads 412 have a higher melting point than that of the solderballs 441 implanted to the electrical connection pads 411, so as toassure that the solder balls 442 implanted to the dummy pads 412 caneffectively surround and confine the encapsulant of the lowersemiconductor package 510.

The solder balls 442 implanted to the dummy pads 412 of the uppersemiconductor package 410 can also be made of alloy having a meltingpoint higher than that of the solder balls 441 implanted to theelectrical connection pads 411. The alloy is, for example, high-leadalloy having a lead/tin (Pb/Sn) ratio of 90/10 or 95/5, or lead-freealloy having a tin/silver/copper (Sn/Ag/Cu) ratio of 96.5/3/0.05, etc.

Therefore, in the stack structure of semiconductor packages and themethod for fabricating the stack structure according to the presentinvention, a plurality of electrical connection pads serving aselectrical input/output (I/O) pads and a plurality of dummy pads areformed on the second surface of the upper semiconductor package, whereinthe positions of the dummy pads correspond to those around theencapsulant of the lower semiconductor package. Thus, when the uppersemiconductor package is mounted on the lower semiconductor package, theupper semiconductor package can be electrically connected to the lowersemiconductor package by the solder balls implanted to the electricalconnection pads, and the encapsulant of the lower semiconductor packagecan be surrounded and confined by the solder balls implanted to thedummy pads, so as to effectively and properly position the uppersemiconductor package on the lower semiconductor package, therebyavoiding misalignment during a reflow process and electrical connectionfailure for stacking semiconductor packages in the prior art.

Moreover, the solder balls on the dummy pads to form the positioningmechanism are implanted together with the solder balls on the electricalconnection pads, such that no additional fabrication process isrequired. Compared with the prior art using a pre-solder materialprovided on the substrate of the lower semiconductor package, orapplying infrared paste between the substrates of the upper and lowersemiconductor package and performing infrared irradiation so as topositioning the stacked upper and lower semiconductor packages, thepresent invention without the use of the pre-solder material, infraredpaste and infrared irradiation, effectively avoids increase in thefabrication costs and complexity of the fabrication processes.

The invention has been described using exemplary preferred embodiments.However, it is to be understood that the scope of the invention is notlimited to the disclosed embodiments. On the contrary, it is intended tocover various modifications and similar arrangements. The scope of theclaims, therefore, should be accorded the broadest interpretation so asto encompass all such modifications and similar arrangements.

What is claimed is:
 1. A method for fabricating a stack structure ofsemiconductor packages, the method comprising the steps of: providing asubstrate having a first surface and a second surface opposite to thefirst surface, wherein a plurality of electrical connection pads anddummy pads are formed on the second surface of the substrate; mountingand electrically connecting at least one semiconductor chip to the firstsurface of the substrate; implanting a plurality of solder balls to theelectrical connection pads and the dummy pads of the second surface ofthe substrate, so as to form an upper semiconductor package; andproviding a fabricated lower semiconductor package comprising asubstrate, a semiconductor chip disposed on and electrically connectedto the substrate, and an encapsulant formed on the substrate andencapsulating the semiconductor chip, and mounting the uppersemiconductor package on the lower semiconductor package, wherein theupper semiconductor package is electrically connected to the substrateof the lower semiconductor package by the solder balls implanted to theelectrical connection pads of the upper semiconductor package, and theencapsulant of the lower semiconductor package is surrounded andconfined by the solder balls implanted to the dummy pads of the uppersemiconductor package, so as to form the stack structure ofsemiconductor packages.
 2. The method of claim 1, wherein the lowersemiconductor package further comprises a plurality of solder ballsimplanted to a surface of the substrate free of being mounted with thesemiconductor chip.
 3. The method of claim 1, wherein the electricalconnection pads are formed in a peripheral portion of the second surfaceof the substrate of the upper semiconductor package and serve aselectrical input/output pads, and the dummy pads are formed on thesecond surface of the substrate of the upper semiconductor package andare located at positions corresponding to those around the encapsulantof the lower semiconductor package.
 4. The method of claim 1, wherein atleast one of the dummy pads of the second surface of the substrate ofthe upper semiconductor package is provided at a position correspondingto that closely adjacent to each edge of the encapsulant of the lowersemiconductor package.
 5. The method of claim 4, wherein the at leastone dummy pad is located at a position corresponding to that closelyadjacent to one of a middle portion, one end and two ends of each edgeof the encapsulant of the lower semiconductor package.
 6. The method ofclaim 1, wherein the dummy pads of the second surface of the substrateof the upper semiconductor package are located at positionscorresponding to those closely adjacent to corners of the encapsulant ofthe lower semiconductor package and further extended along edges formingthe corners of the encapsulant of the lower semiconductor package, suchthat the solder balls implanted to the dummy pads form a dam structurearound each of the corners of the encapsulant of the lower semiconductorpackage.
 7. The method of claim 1, wherein the solder balls implanted tothe dummy pads are dimensionally smaller than or equal to the solderballs implanted to the electrical connection pads of the uppersemiconductor package.
 8. The method of claim 1, wherein the substrateof the lower semiconductor package further comprises a plurality ofdummy pads formed thereon and corresponding in position to the dummypads of the second surface of the substrate of the upper semiconductorpackage.
 9. The method of claim 1, wherein each of the solder ballsimplanted to the dummy pads of the upper semiconductor package comprisesa core portion and a peripheral portion, and the core portions of thesolder balls implanted to the dummy pads have a higher melting pointthan that of the solder balls implanted to the electrical connectionpads of the upper semiconductor package.
 10. The method of claim 9,wherein the core portion is made of one of copper, lead and polymer, andthe peripheral portion is made of a solder material.
 11. The method ofclaim 1, wherein the solder balls implanted to the dummy pads of theupper semiconductor package have a higher melting point than that of thesolder balls implanted to the electrical connection pads of the uppersemiconductor package.
 12. The method of claim 11, wherein the solderballs implanted to the dummy pads of the upper semiconductor package aremade of one of high-lead alloy and lead-free alloy.